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Casa > Centro di prodotti > Prodotti a semiconduttore discreti > Transistor-FET, MOSFET-singolo > RUE002N02TL
RUE002N02TL
RUE002N02TL
Modello di prodotti:
RUE002N02TL
fabbricante:
LAPIS Semiconductor
Descrizione:
MOSFET N-CH 20V .2A EMT3
Stato Lead senza piombo / RoHS:
Senza piombo / RoHS conforme
quantità disponibile:
11747 Pieces
Tempo di consegna:
1-2 days
Scheda dati:
RUE002N02TL.pdf
Inchiesta

introduzione

We can supply RUE002N02TL, use the request quote form to request RUE002N02TL pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number RUE002N02TL.The price and lead time for RUE002N02TL depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# RUE002N02TL.We look forward to working with you to establish long-term relations of cooperation

Specifiche

Condizione New & Unused, Original Packing
Origine Contact us
Vgs (th) (max) a Id:1V @ 1mA
Vgs (Max):±8V
Tecnologia:MOSFET (Metal Oxide)
Contenitore dispositivo fornitore:EMT3
Serie:-
Rds On (max) a Id, Vgs:1.2 Ohm @ 200mA, 2.5V
Dissipazione di potenza (max):150mW (Ta)
imballaggio:Tape & Reel (TR)
Contenitore / involucro:SC-75, SOT-416
Altri nomi:RUE002N02TLTR
temperatura di esercizio:150°C (TJ)
Tipo montaggio:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Stato senza piombo / Stato RoHS:Lead free / RoHS Compliant
Capacità di ingresso (Ciss) (Max) @ Vds:25pF @ 10V
Tipo FET:N-Channel
Caratteristica FET:-
Tensione dell'azionamento (Max Rds On, Min Rds On):1.2V, 2.5V
Tensione drain-source (Vdss):20V
Descrizione dettagliata:N-Channel 20V 200mA (Ta) 150mW (Ta) Surface Mount EMT3
Corrente - Drain continuo (Id) @ 25 ° C:200mA (Ta)
Email:[email protected]

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