RUE002N02TL
RUE002N02TL
Artikelnummer:
RUE002N02TL
Hersteller:
LAPIS Semiconductor
Beschreibung:
MOSFET N-CH 20V .2A EMT3
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
11747 Pieces
Lieferzeit:
1-2 days
Datenblatt:
RUE002N02TL.pdf

Einführung

We can supply RUE002N02TL, use the request quote form to request RUE002N02TL pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number RUE002N02TL.The price and lead time for RUE002N02TL depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# RUE002N02TL.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:1V @ 1mA
Vgs (Max):±8V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:EMT3
Serie:-
Rds On (Max) @ Id, Vgs:1.2 Ohm @ 200mA, 2.5V
Verlustleistung (max):150mW (Ta)
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:SC-75, SOT-416
Andere Namen:RUE002N02TLTR
Betriebstemperatur:150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:25pF @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):1.2V, 2.5V
Drain-Source-Spannung (Vdss):20V
detaillierte Beschreibung:N-Channel 20V 200mA (Ta) 150mW (Ta) Surface Mount EMT3
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:200mA (Ta)
Email:[email protected]

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