NSM11156DW6T1G
NSM11156DW6T1G
Modello di prodotti:
NSM11156DW6T1G
fabbricante:
AMI Semiconductor / ON Semiconductor
Descrizione:
TRANS PNP PREBIAS/PNP 0.23W SC88
Stato Lead senza piombo / RoHS:
Senza piombo / RoHS conforme
quantità disponibile:
23875 Pieces
Tempo di consegna:
1-2 days
Scheda dati:
NSM11156DW6T1G.pdf

introduzione

We can supply NSM11156DW6T1G, use the request quote form to request NSM11156DW6T1G pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number NSM11156DW6T1G.The price and lead time for NSM11156DW6T1G depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# NSM11156DW6T1G.We look forward to working with you to establish long-term relations of cooperation

Specifiche

Condizione New & Unused, Original Packing
Origine Contact us
Tensione - rottura collettore-emettitore (max):50V, 65V
Vce saturazione (max) a Ib, Ic:250mV @ 300µA, 10mA / 650mV @ 5mA, 100mA
Tipo transistor:1 PNP Pre-Biased, 1 PNP
Contenitore dispositivo fornitore:SC-88/SC70-6/SOT-363
Serie:-
Resistor - Emitter Base (R2):10 kOhms
Resistor - Base (R1):10 kOhms
Potenza - Max:230mW
imballaggio:Tape & Reel (TR)
Contenitore / involucro:6-TSSOP, SC-88, SOT-363
Tipo montaggio:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Stato senza piombo / Stato RoHS:Lead free / RoHS Compliant
Frequenza - transizione:-
Descrizione dettagliata:Pre-Biased Bipolar Transistor (BJT) 1 PNP Pre-Biased, 1 PNP 50V, 65V 100mA 230mW Surface Mount SC-88/SC70-6/SOT-363
Guadagno in corrente cc (hFE) (min) @ Ic, Vce:35 @ 5mA, 10V / 220 @ 2mA, 5V
Corrente - Cutoff collettore (max):500nA
Corrente - collettore (Ic) (max):100mA
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