Bedingung | New & Unused, Original Packing |
---|---|
Ursprung | Contact us |
Spannung - Kollektor-Emitter-Durchbruch (max): | 50V, 65V |
VCE Sättigung (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA / 650mV @ 5mA, 100mA |
Transistor-Typ: | 1 PNP Pre-Biased, 1 PNP |
Supplier Device-Gehäuse: | SC-88/SC70-6/SOT-363 |
Serie: | - |
Widerstand - Emitterbasis (R2): | 10 kOhms |
Widerstand - Basis (R1): | 10 kOhms |
Leistung - max: | 230mW |
Verpackung: | Tape & Reel (TR) |
Verpackung / Gehäuse: | 6-TSSOP, SC-88, SOT-363 |
Befestigungsart: | Surface Mount |
Feuchtigkeitsempfindlichkeitsniveau (MSL): | 1 (Unlimited) |
Bleifreier Status / RoHS-Status: | Lead free / RoHS Compliant |
Frequenz - Übergang: | - |
detaillierte Beschreibung: | Pre-Biased Bipolar Transistor (BJT) 1 PNP Pre-Biased, 1 PNP 50V, 65V 100mA 230mW Surface Mount SC-88/SC70-6/SOT-363 |
DC Stromgewinn (HFE) (Min) @ Ic, VCE: | 35 @ 5mA, 10V / 220 @ 2mA, 5V |
Strom - Collector Cutoff (Max): | 500nA |
Strom - Kollektor (Ic) (max): | 100mA |
Email: | [email protected] |