Kondisi | New & Unused, Original Packing |
---|---|
Asal | Contact us |
Vgs (th) (Max) @ Id: | 3V @ 1mA |
Vgs (Max): | ±20V |
Teknologi: | MOSFET (Metal Oxide) |
Paket Perangkat pemasok: | TO-92-3 |
Seri: | - |
Rds Pada (Max) @ Id, Vgs: | 5 Ohm @ 200mA, 10V |
Power Disipasi (Max): | 830mW (Ta) |
Pengemasan: | Bulk |
Paket / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Suhu Operasional: | -55°C ~ 150°C (TJ) |
mount Jenis: | Through Hole |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Status Gratis Memimpin / Status RoHS: | Lead free / RoHS Compliant |
Kapasitansi Masukan (Ciss) (Max) @ VDS: | 40pF @ 10V |
FET Jenis: | N-Channel |
Fitur FET: | - |
Drive Voltage (Max Rds On, Min RDS Aktif): | 10V |
Tiriskan untuk Sumber Tegangan (Vdss): | 60V |
Detil Deskripsi: | N-Channel 60V 500mA (Ta) 830mW (Ta) Through Hole TO-92-3 |
Current - Continuous Drain (Id) @ 25 ° C: | 500mA (Ta) |
Nomor Bagian Dasar: | BS170 |
Email: | [email protected] |