2N2907AE4
Modèle de produit:
2N2907AE4
Fabricant:
Microsemi
La description:
DIE TRANS PNP MED PWR GEN PURP T
État sans plomb / État RoHS:
Conforme à RoHS
quantité disponible:
18697 Pieces
Heure de livraison:
1-2 days
Fiche technique:
2N2907AE4.pdf

introduction

We can supply 2N2907AE4, use the request quote form to request 2N2907AE4 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number 2N2907AE4.The price and lead time for 2N2907AE4 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# 2N2907AE4.We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Tension - Collecteur-émetteur disruptif (Max):60V
Vce Saturation (Max) @ Ib, Ic:1.6V @ 50mA, 500mA
Transistor Type:PNP
Package composant fournisseur:TO-18
Séries:-
Statut RoHS:RoHS Compliant
Puissance - Max:500mW
Package / Boîte:TO-206AA, TO-18-3 Metal Can
Température de fonctionnement:-65°C ~ 200°C (TJ)
Type de montage:Through Hole
Fréquence - Transition:-
Description détaillée:Bipolar (BJT) Transistor PNP 60V 600mA 500mW Through Hole TO-18
Gain en courant DC (hFE) (Min) @ Ic, Vce:100 @ 150mA, 10V
Courant - Collecteur Cutoff (Max):10µA (ICBO)
Courant - Collecteur (Ic) (max):600mA
Email:[email protected]

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