SIB800EDK-T1-GE3
SIB800EDK-T1-GE3
Artikelnummer:
SIB800EDK-T1-GE3
Hersteller:
Electro-Films (EFI) / Vishay
Beschreibung:
MOSFET N-CH 20V 1.5A SC75-6
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
41852 Pieces
Lieferzeit:
1-2 days
Datenblatt:
SIB800EDK-T1-GE3.pdf

Einführung

We can supply SIB800EDK-T1-GE3, use the request quote form to request SIB800EDK-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SIB800EDK-T1-GE3.The price and lead time for SIB800EDK-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SIB800EDK-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:1V @ 250µA
Vgs (Max):±6V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:PowerPAK® SC-75-6L Single
Serie:LITTLE FOOT®
Rds On (Max) @ Id, Vgs:225 mOhm @ 1.6A, 4.5V
Verlustleistung (max):1.1W (Ta), 3.1W (Tc)
Verpackung:Original-Reel®
Verpackung / Gehäuse:PowerPAK® SC-75-6L
Andere Namen:SIB800EDK-T1-GE3DKR
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs:1.7nC @ 4.5V
Typ FET:N-Channel
FET-Merkmal:Schottky Diode (Isolated)
Antriebsspannung (Max Rds On, Min Rds On):1.5V, 4.5V
Drain-Source-Spannung (Vdss):20V
detaillierte Beschreibung:N-Channel 20V 1.5A (Tc) 1.1W (Ta), 3.1W (Tc) Surface Mount PowerPAK® SC-75-6L Single
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:1.5A (Tc)
Email:[email protected]

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