SIA777EDJ-T1-GE3
SIA777EDJ-T1-GE3
Artikelnummer:
SIA777EDJ-T1-GE3
Hersteller:
Electro-Films (EFI) / Vishay
Beschreibung:
MOSFET N/P-CH 20V/12V SC70-6L
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
30612 Pieces
Lieferzeit:
1-2 days
Datenblatt:
SIA777EDJ-T1-GE3.pdf

Einführung

We can supply SIA777EDJ-T1-GE3, use the request quote form to request SIA777EDJ-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SIA777EDJ-T1-GE3.The price and lead time for SIA777EDJ-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SIA777EDJ-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:1V @ 250µA
Supplier Device-Gehäuse:PowerPAK® SC-70-6 Dual
Serie:TrenchFET®
Rds On (Max) @ Id, Vgs:225 mOhm @ 1.6A, 4.5V
Leistung - max:5W, 7.8W
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:PowerPAK® SC-70-6 Dual
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:15 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:-
Gate Charge (Qg) (Max) @ Vgs:2.2nC @ 5V
Typ FET:N and P-Channel
FET-Merkmal:Logic Level Gate
Drain-Source-Spannung (Vdss):20V, 12V
detaillierte Beschreibung:Mosfet Array N and P-Channel 20V, 12V 1.5A, 4.5A 5W, 7.8W Surface Mount PowerPAK® SC-70-6 Dual
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:1.5A, 4.5A
Email:[email protected]

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