TSM60NB099PW C1G
TSM60NB099PW C1G
型號:
TSM60NB099PW C1G
製造商:
TSC (Taiwan Semiconductor)
描述:
MOSFET N-CHANNEL 600V 38A TO247
無鉛狀態/ RoHS狀態:
無鉛/符合RoHS
庫存數量:
68171 Pieces
發貨時間:
1-2 days
數據表:
TSM60NB099PW C1G.pdf

簡單介紹

We can supply TSM60NB099PW C1G, use the request quote form to request TSM60NB099PW C1G pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number TSM60NB099PW C1G.The price and lead time for TSM60NB099PW C1G depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# TSM60NB099PW C1G.We look forward to working with you to establish long-term relations of cooperation

產品特性

狀況 New & Unused, Original Packing
來源 Contact us
VGS(TH)(最大)@標識:4V @ 250µA
Vgs(最大):±30V
技術:MOSFET (Metal Oxide)
供應商設備封裝:TO-247
系列:-
RDS(ON)(最大值)@標識,柵極電壓:99 mOhm @ 11.7A, 10V
功率耗散(最大):329W (Tc)
封裝/箱體:TO-247-3
其他名稱:TSM60NB099PW C1G-ND
TSM60NB099PWC1G
工作溫度:-55°C ~ 150°C (TJ)
安裝類型:Through Hole
濕度敏感度等級(MSL):1 (Unlimited)
製造商標準交貨期:14 Weeks
無鉛狀態/ RoHS狀態:Lead free / RoHS Compliant
輸入電容(Ciss)(Max)@ Vds:2587pF @ 100V
柵極電荷(Qg)(Max)@ Vgs:62nC @ 10V
FET型:N-Channel
FET特點:-
驅動電壓(最大Rds開,最小Rds開):10V
漏極至源極電壓(Vdss):600V
詳細說明:N-Channel 600V 38A (Tc) 329W (Tc) Through Hole TO-247
電流 - 25°C連續排水(Id):38A (Tc)
Email:[email protected]

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