SIHU4N80E-GE3
SIHU4N80E-GE3
型號:
SIHU4N80E-GE3
製造商:
Electro-Films (EFI) / Vishay
描述:
MOSFET N-CHAN 800V TO-251
無鉛狀態/ RoHS狀態:
無鉛/符合RoHS
庫存數量:
41017 Pieces
發貨時間:
1-2 days
數據表:
SIHU4N80E-GE3.pdf

簡單介紹

We can supply SIHU4N80E-GE3, use the request quote form to request SIHU4N80E-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SIHU4N80E-GE3.The price and lead time for SIHU4N80E-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SIHU4N80E-GE3.We look forward to working with you to establish long-term relations of cooperation

產品特性

狀況 New & Unused, Original Packing
來源 Contact us
VGS(TH)(最大)@標識:4V @ 250µA
Vgs(最大):±30V
技術:MOSFET (Metal Oxide)
供應商設備封裝:IPAK (TO-251)
系列:E
RDS(ON)(最大值)@標識,柵極電壓:1.27 Ohm @ 2A, 10V
功率耗散(最大):69W (Tc)
封装:Tube
封裝/箱體:TO-251-3 Long Leads, IPak, TO-251AB
工作溫度:-55°C ~ 150°C (TJ)
安裝類型:Through Hole
濕度敏感度等級(MSL):1 (Unlimited)
無鉛狀態/ RoHS狀態:Lead free / RoHS Compliant
輸入電容(Ciss)(Max)@ Vds:622pF @ 100V
柵極電荷(Qg)(Max)@ Vgs:32nC @ 10V
FET型:N-Channel
FET特點:-
驅動電壓(最大Rds開,最小Rds開):10V
漏極至源極電壓(Vdss):800V
詳細說明:N-Channel 800V 4.3A (Tc) 69W (Tc) Through Hole IPAK (TO-251)
電流 - 25°C連續排水(Id):4.3A (Tc)
Email:[email protected]

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