SIHB24N65ET5-GE3
SIHB24N65ET5-GE3
型號:
SIHB24N65ET5-GE3
製造商:
Electro-Films (EFI) / Vishay
描述:
MOSFET N-CH 650V 24A TO263
庫存數量:
62847 Pieces
發貨時間:
1-2 days
數據表:
SIHB24N65ET5-GE3.pdf

簡單介紹

We can supply SIHB24N65ET5-GE3, use the request quote form to request SIHB24N65ET5-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SIHB24N65ET5-GE3.The price and lead time for SIHB24N65ET5-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SIHB24N65ET5-GE3.We look forward to working with you to establish long-term relations of cooperation

產品特性

狀況 New & Unused, Original Packing
來源 Contact us
VGS(TH)(最大)@標識:4V @ 250µA
Vgs(最大):±30V
技術:MOSFET (Metal Oxide)
供應商設備封裝:TO-263 (D²Pak)
系列:E
RDS(ON)(最大值)@標識,柵極電壓:145 mOhm @ 12A, 10V
功率耗散(最大):250W (Tc)
封装:Tape & Reel (TR)
封裝/箱體:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
工作溫度:-55°C ~ 150°C (TJ)
安裝類型:Surface Mount
輸入電容(Ciss)(Max)@ Vds:2740pF @ 100V
柵極電荷(Qg)(Max)@ Vgs:122nC @ 10V
FET型:N-Channel
FET特點:-
驅動電壓(最大Rds開,最小Rds開):10V
漏極至源極電壓(Vdss):650V
詳細說明:N-Channel 650V 24A (Tc) 250W (Tc) Surface Mount TO-263 (D²Pak)
電流 - 25°C連續排水(Id):24A (Tc)
Email:[email protected]

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