SIHB21N65EF-GE3
- 型號:
- SIHB21N65EF-GE3
- 描述:
- MOSFET N-CH 650V 21A D2PAK
- 無鉛狀態/ RoHS狀態:
- 無鉛/符合RoHS
- 庫存數量:
- 23456 Pieces
- 發貨時間:
- 1-2 days
簡單介紹
We can supply SIHB21N65EF-GE3, use the request quote form to request SIHB21N65EF-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SIHB21N65EF-GE3.The price and lead time for SIHB21N65EF-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SIHB21N65EF-GE3.We look forward to working with you to establish long-term relations of cooperation
產品特性
| 狀況 | New & Unused, Original Packing |
|---|---|
| 來源 | Contact us |
| VGS（TH）（最大）@標識: | 4V @ 250µA |
| Vgs（最大）: | ±30V |
| 技術: | MOSFET (Metal Oxide) |
| 供應商設備封裝: | D²PAK (TO-263) |
| 系列: | - |
| RDS（ON）（最大值）@標識，柵極電壓: | 180 mOhm @ 11A, 10V |
| 功率耗散（最大）: | 208W (Tc) |
| 封装: | Tube |
| 封裝/箱體: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| 工作溫度: | -55°C ~ 150°C (TJ) |
| 安裝類型: | Surface Mount |
| 濕度敏感度等級（MSL）: | 1 (Unlimited) |
| 無鉛狀態/ RoHS狀態: | Lead free / RoHS Compliant |
| 輸入電容（Ciss）（Max）@ Vds: | 2322pF @ 100V |
| 柵極電荷（Qg）（Max）@ Vgs: | 106nC @ 10V |
| FET型: | N-Channel |
| FET特點: | - |
| 驅動電壓（最大Rds開，最小Rds開）: | 10V |
| 漏極至源極電壓（Vdss）: | 650V |
| 詳細說明: | N-Channel 650V 21A (Tc) 208W (Tc) Surface Mount D²PAK (TO-263) |
| 電流 - 25°C連續排水（Id）: | 21A (Tc) |
| Email: | [email protected] |
