SI8441DB-T2-E1
型號:
SI8441DB-T2-E1
製造商:
Electro-Films (EFI) / Vishay
描述:
MOSFET P-CH 20V 10.5A 2X2 6MFP
無鉛狀態/ RoHS狀態:
無鉛/符合RoHS
庫存數量:
25241 Pieces
發貨時間:
1-2 days
數據表:
SI8441DB-T2-E1.pdf

簡單介紹

We can supply SI8441DB-T2-E1, use the request quote form to request SI8441DB-T2-E1 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SI8441DB-T2-E1.The price and lead time for SI8441DB-T2-E1 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SI8441DB-T2-E1.We look forward to working with you to establish long-term relations of cooperation

產品特性

狀況 New & Unused, Original Packing
來源 Contact us
VGS(TH)(最大)@標識:700mV @ 250µA
Vgs(最大):±5V
技術:MOSFET (Metal Oxide)
供應商設備封裝:6-Micro Foot™ (1.5x1)
系列:TrenchFET®
RDS(ON)(最大值)@標識,柵極電壓:80 mOhm @ 1A, 4.5V
功率耗散(最大):2.77W (Ta), 13W (Tc)
封装:Tape & Reel (TR)
封裝/箱體:6-MICRO FOOT™
工作溫度:-55°C ~ 150°C (TJ)
安裝類型:Surface Mount
濕度敏感度等級(MSL):1 (Unlimited)
製造商標準交貨期:6 Weeks
無鉛狀態/ RoHS狀態:Lead free / RoHS Compliant
輸入電容(Ciss)(Max)@ Vds:600pF @ 10V
柵極電荷(Qg)(Max)@ Vgs:13nC @ 5V
FET型:P-Channel
FET特點:-
驅動電壓(最大Rds開,最小Rds開):1.2V, 4.5V
漏極至源極電壓(Vdss):20V
詳細說明:P-Channel 20V 10.5A (Tc) 2.77W (Ta), 13W (Tc) Surface Mount 6-Micro Foot™ (1.5x1)
電流 - 25°C連續排水(Id):10.5A (Tc)
Email:[email protected]

快速詢價

型號
數量
公司
邮箱
電話
要求