SI8435DB-T1-E1
SI8435DB-T1-E1
型號:
SI8435DB-T1-E1
製造商:
Electro-Films (EFI) / Vishay
描述:
MOSFET P-CH 20V 10A 2X2 4-MFP
無鉛狀態/ RoHS狀態:
無鉛/符合RoHS
庫存數量:
16255 Pieces
發貨時間:
1-2 days
數據表:
SI8435DB-T1-E1.pdf

簡單介紹

We can supply SI8435DB-T1-E1, use the request quote form to request SI8435DB-T1-E1 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SI8435DB-T1-E1.The price and lead time for SI8435DB-T1-E1 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SI8435DB-T1-E1.We look forward to working with you to establish long-term relations of cooperation

產品特性

狀況 New & Unused, Original Packing
來源 Contact us
VGS(TH)(最大)@標識:1V @ 250µA
Vgs(最大):±5V
技術:MOSFET (Metal Oxide)
供應商設備封裝:4-Microfoot
系列:TrenchFET®
RDS(ON)(最大值)@標識,柵極電壓:41 mOhm @ 1A, 4.5V
功率耗散(最大):2.78W (Ta), 6.25W (Tc)
封装:Tape & Reel (TR)
封裝/箱體:4-XFBGA, CSPBGA
其他名稱:SI8435DB-T1-E1TR
工作溫度:-55°C ~ 150°C (TJ)
安裝類型:Surface Mount
濕度敏感度等級(MSL):1 (Unlimited)
無鉛狀態/ RoHS狀態:Lead free / RoHS Compliant
輸入電容(Ciss)(Max)@ Vds:1600pF @ 10V
柵極電荷(Qg)(Max)@ Vgs:35nC @ 5V
FET型:P-Channel
FET特點:-
驅動電壓(最大Rds開,最小Rds開):1.5V, 4.5V
漏極至源極電壓(Vdss):20V
詳細說明:P-Channel 20V 10A (Tc) 2.78W (Ta), 6.25W (Tc) Surface Mount 4-Microfoot
電流 - 25°C連續排水(Id):10A (Tc)
Email:[email protected]

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