SI4501ADY-T1-E3
型號:
SI4501ADY-T1-E3
製造商:
Electro-Films (EFI) / Vishay
描述:
MOSFET N/P-CH 30V/8V 8SOIC
無鉛狀態/ RoHS狀態:
無鉛/符合RoHS
庫存數量:
71777 Pieces
發貨時間:
1-2 days
數據表:
SI4501ADY-T1-E3.pdf

簡單介紹

We can supply SI4501ADY-T1-E3, use the request quote form to request SI4501ADY-T1-E3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SI4501ADY-T1-E3.The price and lead time for SI4501ADY-T1-E3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SI4501ADY-T1-E3.We look forward to working with you to establish long-term relations of cooperation

產品特性

狀況 New & Unused, Original Packing
來源 Contact us
VGS(TH)(最大)@標識:1.8V @ 250µA
供應商設備封裝:8-SO
系列:TrenchFET®
RDS(ON)(最大值)@標識,柵極電壓:18 mOhm @ 8.8A, 10V
功率 - 最大:1.3W
封装:Tape & Reel (TR)
封裝/箱體:8-SOIC (0.154", 3.90mm Width)
其他名稱:SI4501ADY-T1-E3TR
工作溫度:-55°C ~ 150°C (TJ)
安裝類型:Surface Mount
濕度敏感度等級(MSL):1 (Unlimited)
無鉛狀態/ RoHS狀態:Lead free / RoHS Compliant
輸入電容(Ciss)(Max)@ Vds:-
柵極電荷(Qg)(Max)@ Vgs:20nC @ 5V
FET型:N and P-Channel, Common Drain
FET特點:Logic Level Gate
漏極至源極電壓(Vdss):30V, 8V
詳細說明:Mosfet Array N and P-Channel, Common Drain 30V, 8V 6.3A, 4.1A 1.3W Surface Mount 8-SO
電流 - 25°C連續排水(Id):6.3A, 4.1A
基礎部件號:SI4501
Email:[email protected]

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