SI3993DV-T1-E3
SI3993DV-T1-E3
型號:
SI3993DV-T1-E3
製造商:
Electro-Films (EFI) / Vishay
描述:
MOSFET 2P-CH 30V 1.8A 6-TSOP
無鉛狀態/ RoHS狀態:
無鉛/符合RoHS
庫存數量:
46377 Pieces
發貨時間:
1-2 days
數據表:
SI3993DV-T1-E3.pdf

簡單介紹

We can supply SI3993DV-T1-E3, use the request quote form to request SI3993DV-T1-E3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SI3993DV-T1-E3.The price and lead time for SI3993DV-T1-E3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SI3993DV-T1-E3.We look forward to working with you to establish long-term relations of cooperation

產品特性

狀況 New & Unused, Original Packing
來源 Contact us
VGS(TH)(最大)@標識:3V @ 250µA
供應商設備封裝:6-TSOP
系列:TrenchFET®
RDS(ON)(最大值)@標識,柵極電壓:133 mOhm @ 2.2A, 10V
功率 - 最大:830mW
封装:Tape & Reel (TR)
封裝/箱體:SOT-23-6 Thin, TSOT-23-6
其他名稱:SI3993DV-T1-E3TR
SI3993DVT1E3
工作溫度:-55°C ~ 150°C (TJ)
安裝類型:Surface Mount
濕度敏感度等級(MSL):1 (Unlimited)
無鉛狀態/ RoHS狀態:Lead free / RoHS Compliant
輸入電容(Ciss)(Max)@ Vds:-
柵極電荷(Qg)(Max)@ Vgs:5nC @ 4.5V
FET型:2 P-Channel (Dual)
FET特點:Logic Level Gate
漏極至源極電壓(Vdss):30V
詳細說明:Mosfet Array 2 P-Channel (Dual) 30V 1.8A 830mW Surface Mount 6-TSOP
電流 - 25°C連續排水(Id):1.8A
基礎部件號:SI3993
Email:[email protected]

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