SI3529DV-T1-GE3
- 型號:
- SI3529DV-T1-GE3
- 描述:
- MOSFET N/P-CH 40V 2.5A 6-TSOP
- 無鉛狀態/ RoHS狀態:
- 無鉛/符合RoHS
- 庫存數量:
- 51637 Pieces
- 發貨時間:
- 1-2 days
簡單介紹
We can supply SI3529DV-T1-GE3, use the request quote form to request SI3529DV-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SI3529DV-T1-GE3.The price and lead time for SI3529DV-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SI3529DV-T1-GE3.We look forward to working with you to establish long-term relations of cooperation
產品特性
| 狀況 | New & Unused, Original Packing |
|---|---|
| 來源 | Contact us |
| VGS（TH）（最大）@標識: | 3V @ 250µA |
| 供應商設備封裝: | 6-TSOP |
| 系列: | TrenchFET® |
| RDS（ON）（最大值）@標識，柵極電壓: | 125 mOhm @ 2.2A, 10V |
| 功率 - 最大: | 1.4W |
| 封装: | Tape & Reel (TR) |
| 封裝/箱體: | SOT-23-6 Thin, TSOT-23-6 |
| 工作溫度: | -55°C ~ 150°C (TJ) |
| 安裝類型: | Surface Mount |
| 濕度敏感度等級（MSL）: | 1 (Unlimited) |
| 無鉛狀態/ RoHS狀態: | Lead free / RoHS Compliant |
| 輸入電容（Ciss）（Max）@ Vds: | 205pF @ 20V |
| 柵極電荷（Qg）（Max）@ Vgs: | 7nC @ 10V |
| FET型: | N and P-Channel |
| FET特點: | Logic Level Gate |
| 漏極至源極電壓（Vdss）: | 40V |
| 詳細說明: | Mosfet Array N and P-Channel 40V 2.5A, 1.95A 1.4W Surface Mount 6-TSOP |
| 電流 - 25°C連續排水（Id）: | 2.5A, 1.95A |
| Email: | [email protected] |
