狀況 | New & Unused, Original Packing |
---|---|
來源 | Contact us |
VGS(TH)(最大)@標識: | 4V @ 1mA |
Vgs(最大): | ±20V |
技術: | MOSFET (Metal Oxide) |
供應商設備封裝: | 8-HVSON (6x5) |
系列: | TrenchMOS™ |
RDS(ON)(最大值)@標識,柵極電壓: | 130 mOhm @ 12A, 10V |
功率耗散(最大): | 62.5W (Tc) |
封装: | Tape & Reel (TR) |
封裝/箱體: | 8-VDFN Exposed Pad |
其他名稱: | 934057302518 PHM12NQ20T /T3 PHM12NQ20T /T3-ND |
工作溫度: | -55°C ~ 150°C (TJ) |
安裝類型: | Surface Mount |
濕度敏感度等級(MSL): | 1 (Unlimited) |
無鉛狀態/ RoHS狀態: | Lead free / RoHS Compliant |
輸入電容(Ciss)(Max)@ Vds: | 1230pF @ 25V |
柵極電荷(Qg)(Max)@ Vgs: | 26nC @ 10V |
FET型: | N-Channel |
FET特點: | - |
驅動電壓(最大Rds開,最小Rds開): | 5V, 10V |
漏極至源極電壓(Vdss): | 200V |
詳細說明: | N-Channel 200V 14.4A (Tc) 62.5W (Tc) Surface Mount 8-HVSON (6x5) |
電流 - 25°C連續排水(Id): | 14.4A (Tc) |
Email: | [email protected] |