NVD5802NT4G-TB01
NVD5802NT4G-TB01
型號:
NVD5802NT4G-TB01
製造商:
AMI Semiconductor / ON Semiconductor
描述:
MOSFET N-CH 40V 101A DPAK
無鉛狀態/ RoHS狀態:
無鉛/符合RoHS
庫存數量:
31214 Pieces
發貨時間:
1-2 days
數據表:
NVD5802NT4G-TB01.pdf

簡單介紹

We can supply NVD5802NT4G-TB01, use the request quote form to request NVD5802NT4G-TB01 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number NVD5802NT4G-TB01.The price and lead time for NVD5802NT4G-TB01 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# NVD5802NT4G-TB01.We look forward to working with you to establish long-term relations of cooperation

產品特性

狀況 New & Unused, Original Packing
來源 Contact us
VGS(TH)(最大)@標識:3.5V @ 250µA
Vgs(最大):±20V
技術:MOSFET (Metal Oxide)
供應商設備封裝:DPAK
系列:Automotive, AEC-Q101
RDS(ON)(最大值)@標識,柵極電壓:4.4 mOhm @ 50A, 10V
功率耗散(最大):2.5W (Ta), 93.75W (Tc)
封装:Tape & Reel (TR)
封裝/箱體:TO-252-3, DPak (2 Leads + Tab), SC-63
工作溫度:-55°C ~ 175°C (TJ)
安裝類型:Surface Mount
濕度敏感度等級(MSL):1 (Unlimited)
無鉛狀態/ RoHS狀態:Lead free / RoHS Compliant
輸入電容(Ciss)(Max)@ Vds:5300pF @ 12V
柵極電荷(Qg)(Max)@ Vgs:100nC @ 10V
FET型:N-Channel
FET特點:-
驅動電壓(最大Rds開,最小Rds開):5V, 10V
漏極至源極電壓(Vdss):40V
詳細說明:N-Channel 40V 16.4A (Ta), 101A (Tc) 2.5W (Ta), 93.75W (Tc) Surface Mount DPAK
電流 - 25°C連續排水(Id):16.4A (Ta), 101A (Tc)
Email:[email protected]

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