NTD4856N-35G
NTD4856N-35G
型號:
NTD4856N-35G
製造商:
AMI Semiconductor / ON Semiconductor
描述:
MOSFET N-CH 25V 13.3A IPAK
無鉛狀態/ RoHS狀態:
無鉛/符合RoHS
庫存數量:
79075 Pieces
發貨時間:
1-2 days
數據表:
NTD4856N-35G.pdf

簡單介紹

We can supply NTD4856N-35G, use the request quote form to request NTD4856N-35G pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number NTD4856N-35G.The price and lead time for NTD4856N-35G depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# NTD4856N-35G.We look forward to working with you to establish long-term relations of cooperation

產品特性

狀況 New & Unused, Original Packing
來源 Contact us
VGS(TH)(最大)@標識:2.5V @ 250µA
Vgs(最大):±20V
技術:MOSFET (Metal Oxide)
供應商設備封裝:I-PAK
系列:-
RDS(ON)(最大值)@標識,柵極電壓:4.7 mOhm @ 30A, 10V
功率耗散(最大):1.33W (Ta), 60W (Tc)
封装:Tube
封裝/箱體:TO-251-3 Stub Leads, IPak
工作溫度:-55°C ~ 175°C (TJ)
安裝類型:Through Hole
濕度敏感度等級(MSL):1 (Unlimited)
無鉛狀態/ RoHS狀態:Lead free / RoHS Compliant
輸入電容(Ciss)(Max)@ Vds:2241pF @ 12V
柵極電荷(Qg)(Max)@ Vgs:27nC @ 4.5V
FET型:N-Channel
FET特點:-
驅動電壓(最大Rds開,最小Rds開):4.5V, 10V
漏極至源極電壓(Vdss):25V
詳細說明:N-Channel 25V 13.3A (Ta), 89A (Tc) 1.33W (Ta), 60W (Tc) Through Hole I-PAK
電流 - 25°C連續排水(Id):13.3A (Ta), 89A (Tc)
Email:[email protected]

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