狀況 | New & Unused, Original Packing |
---|---|
來源 | Contact us |
VGS(TH)(最大)@標識: | 4V @ 90µA |
Vgs(最大): | ±20V |
技術: | MOSFET (Metal Oxide) |
供應商設備封裝: | PG-TO-220-3 |
系列: | OptiMOS™ |
RDS(ON)(最大值)@標識,柵極電壓: | 20 mOhm @ 50A, 10V |
功率耗散(最大): | 150W (Tc) |
封装: | Tube |
封裝/箱體: | TO-220-3 |
其他名稱: | IPP200N15N3 G IPP200N15N3 G-ND IPP200N15N3G SP000680884 |
工作溫度: | -55°C ~ 175°C (TJ) |
安裝類型: | Through Hole |
濕度敏感度等級(MSL): | 1 (Unlimited) |
無鉛狀態/ RoHS狀態: | Lead free / RoHS Compliant |
輸入電容(Ciss)(Max)@ Vds: | 1820pF @ 75V |
柵極電荷(Qg)(Max)@ Vgs: | 31nC @ 10V |
FET型: | N-Channel |
FET特點: | - |
驅動電壓(最大Rds開,最小Rds開): | 8V, 10V |
漏極至源極電壓(Vdss): | 150V |
詳細說明: | N-Channel 150V 50A (Tc) 150W (Tc) Through Hole PG-TO-220-3 |
電流 - 25°C連續排水(Id): | 50A (Tc) |
Email: | [email protected] |