狀況 | New & Unused, Original Packing |
---|---|
來源 | Contact us |
VGS(TH)(最大)@標識: | 4V @ 270µA |
Vgs(最大): | ±20V |
技術: | MOSFET (Metal Oxide) |
供應商設備封裝: | PG-TO-220-3 |
系列: | OptiMOS™ |
RDS(ON)(最大值)@標識,柵極電壓: | 4.1 mOhm @ 100A, 10V |
功率耗散(最大): | 300W (Tc) |
封装: | Tube |
封裝/箱體: | TO-220-3 |
其他名稱: | IPP041N12N3 G IPP041N12N3 G-ND IPP041N12N3G SP000652746 |
工作溫度: | -55°C ~ 175°C (TJ) |
安裝類型: | Through Hole |
濕度敏感度等級(MSL): | 1 (Unlimited) |
無鉛狀態/ RoHS狀態: | Lead free / RoHS Compliant |
輸入電容(Ciss)(Max)@ Vds: | 13800pF @ 60V |
柵極電荷(Qg)(Max)@ Vgs: | 211nC @ 10V |
FET型: | N-Channel |
FET特點: | - |
驅動電壓(最大Rds開,最小Rds開): | 10V |
漏極至源極電壓(Vdss): | 120V |
詳細說明: | N-Channel 120V 120A (Tc) 300W (Tc) Through Hole PG-TO-220-3 |
電流 - 25°C連續排水(Id): | 120A (Tc) |
Email: | [email protected] |