狀況 | New & Unused, Original Packing |
---|---|
來源 | Contact us |
VGS(TH)(最大)@標識: | 5V @ 250µA |
Vgs(最大): | ±30V |
技術: | MOSFET (Metal Oxide) |
供應商設備封裝: | I-PAK |
系列: | QFET® |
RDS(ON)(最大值)@標識,柵極電壓: | 550 mOhm @ 3.1A, 10V |
功率耗散(最大): | 2.5W (Ta), 50W (Tc) |
封装: | Tube |
封裝/箱體: | TO-251-3 Short Leads, IPak, TO-251AA |
工作溫度: | -55°C ~ 150°C (TJ) |
安裝類型: | Through Hole |
濕度敏感度等級(MSL): | 1 (Unlimited) |
無鉛狀態/ RoHS狀態: | Lead free / RoHS Compliant |
輸入電容(Ciss)(Max)@ Vds: | 530pF @ 25V |
柵極電荷(Qg)(Max)@ Vgs: | 15nC @ 10V |
FET型: | N-Channel |
FET特點: | - |
驅動電壓(最大Rds開,最小Rds開): | 10V |
漏極至源極電壓(Vdss): | 250V |
詳細說明: | N-Channel 250V 6.2A (Tc) 2.5W (Ta), 50W (Tc) Through Hole I-PAK |
電流 - 25°C連續排水(Id): | 6.2A (Tc) |
Email: | [email protected] |