SIHB12N60ET1-GE3
SIHB12N60ET1-GE3
Parça Numarası:
SIHB12N60ET1-GE3
Üretici firma:
Electro-Films (EFI) / Vishay
Açıklama:
MOSFET N-CH 600V 12A TO263
Mevcut Miktarı:
6041 Pieces
Teslimat süresi:
1-2 days
Veri Sayfası:
SIHB12N60ET1-GE3.pdf

Giriş

We can supply SIHB12N60ET1-GE3, use the request quote form to request SIHB12N60ET1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SIHB12N60ET1-GE3.The price and lead time for SIHB12N60ET1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SIHB12N60ET1-GE3.We look forward to working with you to establish long-term relations of cooperation

Özellikler

Şart New & Unused, Original Packing
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Id @ Vgs (th) (Max):4V @ 250µA
Vgs (Maks.):±30V
teknoloji:MOSFET (Metal Oxide)
Tedarikçi Cihaz Paketi:TO-263 (D²Pak)
Dizi:E
Id, VGS @ rds On (Max):380 mOhm @ 6A, 10V
Güç Tüketimi (Max):147W (Tc)
paketleme:Bulk
Paket / Kutu:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Çalışma sıcaklığı:-55°C ~ 150°C (TJ)
bağlantı Tipi:Surface Mount
Giriş Kapasitesi (Ciss) (Max) @ Vds:937pF @ 100V
Gate Charge (Qg) (Maks) @ Vgs:58nC @ 10V
FET Tipi:N-Channel
FET Özelliği:-
Sürücü Gerilimi (Maks Rd, Min Rd Salı):10V
Kaynak Gerilim boşaltın (VDSlerin):600V
Detaylı Açıklama:N-Channel 600V 12A (Tc) 147W (Tc) Surface Mount TO-263 (D²Pak)
Akım - 25 ° C'de Sürekli Boşaltma (Id):12A (Tc)
Email:[email protected]

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