SIS439DNT-T1-GE3
SIS439DNT-T1-GE3
Artikelnummer:
SIS439DNT-T1-GE3
Tillverkare:
Electro-Films (EFI) / Vishay
Beskrivning:
MOSFET P-CH 30V 50A 1212-8
Ledningsfri status / RoHS-status:
Blyfri / Överensstämmer med RoHS
tillgänglig kvantitet:
79353 Pieces
Leveranstid:
1-2 days
Datablad:
SIS439DNT-T1-GE3.pdf

Introduktion

We can supply SIS439DNT-T1-GE3, use the request quote form to request SIS439DNT-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SIS439DNT-T1-GE3.The price and lead time for SIS439DNT-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SIS439DNT-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

Specifikationer

Tillstånd New & Unused, Original Packing
Ursprung Contact us
Vgs (th) (Max) @ Id:2.8V @ 250µA
Vgs (Max):±20V
Teknologi:MOSFET (Metal Oxide)
Leverantörs Device Package:PowerPAK® 1212-8S (3.3x3.3)
Serier:TrenchFET®
Rds On (Max) @ Id, Vgs:11 mOhm @ 14A, 10V
Effektdissipation (Max):3.8W (Ta), 52.1W (Tc)
Förpackning:Tape & Reel (TR)
Förpackning / Fodral:PowerPAK® 1212-8S
Andra namn:SIS439DNT-T1-GE3TR
Driftstemperatur:-50°C ~ 150°C (TJ)
Monteringstyp:Surface Mount
Fuktkänslighetsnivå (MSL):1 (Unlimited)
Ledningsfri status / RoHS-status:Lead free / RoHS Compliant
Inputkapacitans (Ciss) (Max) @ Vds:2135pF @ 15V
Gate Laddning (Qg) (Max) @ Vgs:68nC @ 10V
FET-typ:P-Channel
FET-funktionen:-
Drivspänning (Max Rds På, Min Rds På):4.5V, 10V
Avlopp till källspänning (Vdss):30V
detaljerad beskrivning:P-Channel 30V 50A (Tc) 3.8W (Ta), 52.1W (Tc) Surface Mount PowerPAK® 1212-8S (3.3x3.3)
Ström - Kontinuerlig avlopp (Id) @ 25 ° C:50A (Tc)
Email:[email protected]

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