SIB414DK-T1-GE3
SIB414DK-T1-GE3
Artikelnummer:
SIB414DK-T1-GE3
Tillverkare:
Electro-Films (EFI) / Vishay
Beskrivning:
MOSFET N-CH 8V 9A PPAK SC75-6
Ledningsfri status / RoHS-status:
Blyfri / Överensstämmer med RoHS
tillgänglig kvantitet:
61161 Pieces
Leveranstid:
1-2 days
Datablad:
SIB414DK-T1-GE3.pdf

Introduktion

We can supply SIB414DK-T1-GE3, use the request quote form to request SIB414DK-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SIB414DK-T1-GE3.The price and lead time for SIB414DK-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SIB414DK-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

Specifikationer

Tillstånd New & Unused, Original Packing
Ursprung Contact us
Vgs (th) (Max) @ Id:1V @ 250µA
Vgs (Max):±5V
Teknologi:MOSFET (Metal Oxide)
Leverantörs Device Package:PowerPAK® SC-75-6L Single
Serier:TrenchFET®
Rds On (Max) @ Id, Vgs:26 mOhm @ 7.9A, 4.5V
Effektdissipation (Max):2.4W (Ta), 13W (Tc)
Förpackning:Tape & Reel (TR)
Förpackning / Fodral:PowerPAK® SC-75-6L
Andra namn:SIB414DK-T1-GE3TR
SIB414DKT1GE3
Driftstemperatur:-55°C ~ 150°C (TJ)
Monteringstyp:Surface Mount
Fuktkänslighetsnivå (MSL):1 (Unlimited)
Ledningsfri status / RoHS-status:Lead free / RoHS Compliant
Inputkapacitans (Ciss) (Max) @ Vds:732pF @ 4V
Gate Laddning (Qg) (Max) @ Vgs:14.03nC @ 5V
FET-typ:N-Channel
FET-funktionen:-
Drivspänning (Max Rds På, Min Rds På):1.2V, 4.5V
Avlopp till källspänning (Vdss):8V
detaljerad beskrivning:N-Channel 8V 9A (Tc) 2.4W (Ta), 13W (Tc) Surface Mount PowerPAK® SC-75-6L Single
Ström - Kontinuerlig avlopp (Id) @ 25 ° C:9A (Tc)
Email:[email protected]

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