SI7998DP-T1-GE3
SI7998DP-T1-GE3
Artikelnummer:
SI7998DP-T1-GE3
Tillverkare:
Electro-Films (EFI) / Vishay
Beskrivning:
MOSFET 2N-CH 30V 25A PPAK SO-8
Ledningsfri status / RoHS-status:
Blyfri / Överensstämmer med RoHS
tillgänglig kvantitet:
35074 Pieces
Leveranstid:
1-2 days
Datablad:
SI7998DP-T1-GE3.pdf

Introduktion

We can supply SI7998DP-T1-GE3, use the request quote form to request SI7998DP-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SI7998DP-T1-GE3.The price and lead time for SI7998DP-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SI7998DP-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

Specifikationer

Tillstånd New & Unused, Original Packing
Ursprung Contact us
Vgs (th) (Max) @ Id:2.5V @ 250µA
Leverantörs Device Package:PowerPAK® SO-8 Dual
Serier:TrenchFET®
Rds On (Max) @ Id, Vgs:9.3 mOhm @ 15A, 10V
Effekt - Max:22W, 40W
Förpackning:Cut Tape (CT)
Förpackning / Fodral:PowerPAK® SO-8 Dual
Andra namn:SI7998DP-T1-GE3CT
Driftstemperatur:-55°C ~ 150°C (TJ)
Monteringstyp:Surface Mount
Fuktkänslighetsnivå (MSL):1 (Unlimited)
Ledningsfri status / RoHS-status:Lead free / RoHS Compliant
Inputkapacitans (Ciss) (Max) @ Vds:1100pF @ 15V
Gate Laddning (Qg) (Max) @ Vgs:26nC @ 10V
FET-typ:2 N-Channel (Dual)
FET-funktionen:Logic Level Gate
Avlopp till källspänning (Vdss):30V
detaljerad beskrivning:Mosfet Array 2 N-Channel (Dual) 30V 25A, 30A 22W, 40W Surface Mount PowerPAK® SO-8 Dual
Ström - Kontinuerlig avlopp (Id) @ 25 ° C:25A, 30A
Email:[email protected]

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