SI7190ADP-T1-RE3
SI7190ADP-T1-RE3
Artikelnummer:
SI7190ADP-T1-RE3
Tillverkare:
Electro-Films (EFI) / Vishay
Beskrivning:
MOSFET N-CHAN 250V POWERPAK SO-8
Ledningsfri status / RoHS-status:
Blyfri / Överensstämmer med RoHS
tillgänglig kvantitet:
77482 Pieces
Leveranstid:
1-2 days
Datablad:
SI7190ADP-T1-RE3.pdf

Introduktion

We can supply SI7190ADP-T1-RE3, use the request quote form to request SI7190ADP-T1-RE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SI7190ADP-T1-RE3.The price and lead time for SI7190ADP-T1-RE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SI7190ADP-T1-RE3.We look forward to working with you to establish long-term relations of cooperation

Specifikationer

Tillstånd New & Unused, Original Packing
Ursprung Contact us
Vgs (th) (Max) @ Id:4V @ 250µA
Vgs (Max):±20V
Teknologi:MOSFET (Metal Oxide)
Leverantörs Device Package:PowerPAK® SO-8
Serier:ThunderFET®
Rds On (Max) @ Id, Vgs:102 mOhm @ 4.3A, 10V
Effektdissipation (Max):5W (Ta), 56.8W (Tc)
Förpackning:Cut Tape (CT)
Förpackning / Fodral:PowerPAK® SO-8
Andra namn:SI7190ADP-T1-RE3CT
Driftstemperatur:-55°C ~ 150°C (TJ)
Monteringstyp:Surface Mount
Fuktkänslighetsnivå (MSL):1 (Unlimited)
Ledningsfri status / RoHS-status:Lead free / RoHS Compliant
Inputkapacitans (Ciss) (Max) @ Vds:860pF @ 100V
Gate Laddning (Qg) (Max) @ Vgs:22.4nC @ 10V
FET-typ:N-Channel
FET-funktionen:-
Drivspänning (Max Rds På, Min Rds På):7.5V, 10V
Avlopp till källspänning (Vdss):250V
detaljerad beskrivning:N-Channel 250V 4.3A (Ta), 14.4A (Tc) 5W (Ta), 56.8W (Tc) Surface Mount PowerPAK® SO-8
Ström - Kontinuerlig avlopp (Id) @ 25 ° C:4.3A (Ta), 14.4A (Tc)
Email:[email protected]

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