SI3812DV-T1-GE3
SI3812DV-T1-GE3
Artikelnummer:
SI3812DV-T1-GE3
Tillverkare:
Electro-Films (EFI) / Vishay
Beskrivning:
MOSFET N-CH 20V 2A 6-TSOP
Ledningsfri status / RoHS-status:
Blyfri / Överensstämmer med RoHS
tillgänglig kvantitet:
11962 Pieces
Leveranstid:
1-2 days
Datablad:
SI3812DV-T1-GE3.pdf

Introduktion

We can supply SI3812DV-T1-GE3, use the request quote form to request SI3812DV-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SI3812DV-T1-GE3.The price and lead time for SI3812DV-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SI3812DV-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

Specifikationer

Tillstånd New & Unused, Original Packing
Ursprung Contact us
Vgs (th) (Max) @ Id:600mV @ 250µA (Min)
Vgs (Max):±12V
Teknologi:MOSFET (Metal Oxide)
Leverantörs Device Package:6-TSOP
Serier:LITTLE FOOT®
Rds On (Max) @ Id, Vgs:125 mOhm @ 2.4A, 4.5V
Effektdissipation (Max):830mW (Ta)
Förpackning:Tape & Reel (TR)
Förpackning / Fodral:SOT-23-6 Thin, TSOT-23-6
Driftstemperatur:-55°C ~ 150°C (TJ)
Monteringstyp:Surface Mount
Fuktkänslighetsnivå (MSL):1 (Unlimited)
Ledningsfri status / RoHS-status:Lead free / RoHS Compliant
Gate Laddning (Qg) (Max) @ Vgs:4nC @ 4.5V
FET-typ:N-Channel
FET-funktionen:Schottky Diode (Isolated)
Drivspänning (Max Rds På, Min Rds På):2.5V, 4.5V
Avlopp till källspänning (Vdss):20V
detaljerad beskrivning:N-Channel 20V 2A (Ta) 830mW (Ta) Surface Mount 6-TSOP
Ström - Kontinuerlig avlopp (Id) @ 25 ° C:2A (Ta)
Email:[email protected]

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