SI2356DS-T1-GE3
Artikelnummer:
SI2356DS-T1-GE3
Tillverkare:
Electro-Films (EFI) / Vishay
Beskrivning:
MOSFET N-CH 40V 4.3A SOT-23
Ledningsfri status / RoHS-status:
Blyfri / Överensstämmer med RoHS
tillgänglig kvantitet:
12233 Pieces
Leveranstid:
1-2 days
Datablad:
SI2356DS-T1-GE3.pdf

Introduktion

We can supply SI2356DS-T1-GE3, use the request quote form to request SI2356DS-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SI2356DS-T1-GE3.The price and lead time for SI2356DS-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SI2356DS-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

Specifikationer

Tillstånd New & Unused, Original Packing
Ursprung Contact us
Vgs (th) (Max) @ Id:1.5V @ 250µA
Vgs (Max):±12V
Teknologi:MOSFET (Metal Oxide)
Leverantörs Device Package:TO-236
Serier:TrenchFET®
Rds On (Max) @ Id, Vgs:51 mOhm @ 3.2A, 10V
Effektdissipation (Max):960mW (Ta), 1.7W (Tc)
Förpackning:Tape & Reel (TR)
Förpackning / Fodral:TO-236-3, SC-59, SOT-23-3
Andra namn:SI2356DS-T1-GE3TR
Driftstemperatur:-55°C ~ 150°C (TJ)
Monteringstyp:Surface Mount
Fuktkänslighetsnivå (MSL):1 (Unlimited)
Ledningsfri status / RoHS-status:Lead free / RoHS Compliant
Inputkapacitans (Ciss) (Max) @ Vds:370pF @ 20V
Gate Laddning (Qg) (Max) @ Vgs:13nC @ 10V
FET-typ:N-Channel
FET-funktionen:-
Drivspänning (Max Rds På, Min Rds På):2.5V, 10V
Avlopp till källspänning (Vdss):40V
detaljerad beskrivning:N-Channel 40V 4.3A (Tc) 960mW (Ta), 1.7W (Tc) Surface Mount TO-236
Ström - Kontinuerlig avlopp (Id) @ 25 ° C:4.3A (Tc)
Email:[email protected]

Snabbsökcitation

Artikelnummer
Kvantitet
Företag
E-post
Telefon
kommentarer