RQ3G100GNTB
Artikelnummer:
RQ3G100GNTB
Tillverkare:
LAPIS Semiconductor
Beskrivning:
MOSFET N-CH 40V 10A TSMT
Ledningsfri status / RoHS-status:
Blyfri / Överensstämmer med RoHS
tillgänglig kvantitet:
55435 Pieces
Leveranstid:
1-2 days
Datablad:
1.RQ3G100GNTB.pdf2.RQ3G100GNTB.pdf

Introduktion

We can supply RQ3G100GNTB, use the request quote form to request RQ3G100GNTB pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number RQ3G100GNTB.The price and lead time for RQ3G100GNTB depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# RQ3G100GNTB.We look forward to working with you to establish long-term relations of cooperation

Specifikationer

Tillstånd New & Unused, Original Packing
Ursprung Contact us
Vgs (th) (Max) @ Id:2.5V @ 1mA
Vgs (Max):±20V
Teknologi:MOSFET (Metal Oxide)
Leverantörs Device Package:8-HSMT (3.2x3)
Serier:-
Rds On (Max) @ Id, Vgs:14.3 mOhm @ 10A, 10V
Effektdissipation (Max):2W (Ta)
Förpackning:Tape & Reel (TR)
Förpackning / Fodral:8-PowerVDFN
Andra namn:RQ3G100GNTBTR
Driftstemperatur:150°C (TJ)
Monteringstyp:Surface Mount
Fuktkänslighetsnivå (MSL):1 (Unlimited)
Tillverkarens normala ledtid:40 Weeks
Ledningsfri status / RoHS-status:Lead free / RoHS Compliant
Inputkapacitans (Ciss) (Max) @ Vds:615pF @ 20V
Gate Laddning (Qg) (Max) @ Vgs:8.4nC @ 10V
FET-typ:N-Channel
FET-funktionen:-
Drivspänning (Max Rds På, Min Rds På):4.5V, 10V
Avlopp till källspänning (Vdss):40V
detaljerad beskrivning:N-Channel 40V 10A (Ta) 2W (Ta) Surface Mount 8-HSMT (3.2x3)
Ström - Kontinuerlig avlopp (Id) @ 25 ° C:10A (Ta)
Email:[email protected]

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