RN2967FE(TE85L,F)
RN2967FE(TE85L,F)
Artikelnummer:
RN2967FE(TE85L,F)
Tillverkare:
Toshiba Semiconductor and Storage
Beskrivning:
TRANS 2PNP PREBIAS 0.1W ES6
Ledningsfri status / RoHS-status:
Blyfri / Överensstämmer med RoHS
tillgänglig kvantitet:
30737 Pieces
Leveranstid:
1-2 days
Datablad:
RN2967FE(TE85L,F).pdf

Introduktion

We can supply RN2967FE(TE85L,F), use the request quote form to request RN2967FE(TE85L,F) pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number RN2967FE(TE85L,F).The price and lead time for RN2967FE(TE85L,F) depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# RN2967FE(TE85L,F).We look forward to working with you to establish long-term relations of cooperation

Specifikationer

Tillstånd New & Unused, Original Packing
Ursprung Contact us
Spänning - Samlare Emitter Breakdown (Max):50V
Vce Mättnad (Max) @ Ib, Ic:300mV @ 250µA, 5mA
Transistortyp:2 PNP - Pre-Biased (Dual)
Leverantörs Device Package:ES6
Serier:-
Motstånd - Emitterbas (R2):47 kOhms
Motstånd - Bas (R1):10 kOhms
Effekt - Max:100mW
Förpackning:Cut Tape (CT)
Förpackning / Fodral:SOT-563, SOT-666
Andra namn:RN2967FE(TE85LF)CT
Monteringstyp:Surface Mount
Fuktkänslighetsnivå (MSL):1 (Unlimited)
Ledningsfri status / RoHS-status:Lead free / RoHS Compliant
Frekvens - Övergång:200MHz
detaljerad beskrivning:Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 100mW Surface Mount ES6
Likströmsstigning (hFE) (Min) @ Ic, Vce:80 @ 10mA, 5V
Nuvarande - Collector Cutoff (Max):100nA (ICBO)
Nuvarande - Samlare (Ic) (Max):100mA
Email:[email protected]

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