RN2310(TE85L,F)
RN2310(TE85L,F)
Artikelnummer:
RN2310(TE85L,F)
Tillverkare:
Toshiba Semiconductor and Storage
Beskrivning:
TRANS PREBIAS PNP 0.1W USM
Ledningsfri status / RoHS-status:
Blyfri / Överensstämmer med RoHS
tillgänglig kvantitet:
7761 Pieces
Leveranstid:
1-2 days
Datablad:
RN2310(TE85L,F).pdf

Introduktion

We can supply RN2310(TE85L,F), use the request quote form to request RN2310(TE85L,F) pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number RN2310(TE85L,F).The price and lead time for RN2310(TE85L,F) depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# RN2310(TE85L,F).We look forward to working with you to establish long-term relations of cooperation

Specifikationer

Tillstånd New & Unused, Original Packing
Ursprung Contact us
Spänning - Samlare Emitter Breakdown (Max):50V
Vce Mättnad (Max) @ Ib, Ic:300mV @ 250µA, 5mA
Transistortyp:PNP - Pre-Biased
Leverantörs Device Package:USM
Serier:-
Motstånd - Bas (R1):4.7 kOhms
Effekt - Max:100mW
Förpackning:Tape & Reel (TR)
Förpackning / Fodral:SC-70, SOT-323
Andra namn:RN2310(TE85LF)
RN2310(TE85LF)-ND
RN2310(TE85LF)TR
RN2310TE85LF
Monteringstyp:Surface Mount
Fuktkänslighetsnivå (MSL):1 (Unlimited)
Tillverkarens normala ledtid:16 Weeks
Ledningsfri status / RoHS-status:Lead free / RoHS Compliant
Frekvens - Övergång:200MHz
detaljerad beskrivning:Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 200MHz 100mW Surface Mount USM
Likströmsstigning (hFE) (Min) @ Ic, Vce:120 @ 1mA, 5V
Nuvarande - Collector Cutoff (Max):100nA (ICBO)
Nuvarande - Samlare (Ic) (Max):100mA
Bas-delenummer:RN231*
Email:[email protected]

Snabbsökcitation

Artikelnummer
Kvantitet
Företag
E-post
Telefon
kommentarer