NDD04N60Z-1G
NDD04N60Z-1G
Artikelnummer:
NDD04N60Z-1G
Tillverkare:
AMI Semiconductor / ON Semiconductor
Beskrivning:
MOSFET N-CH 600V 4A IPAK
Ledningsfri status / RoHS-status:
Blyfri / Överensstämmer med RoHS
tillgänglig kvantitet:
66502 Pieces
Leveranstid:
1-2 days
Datablad:
NDD04N60Z-1G.pdf

Introduktion

We can supply NDD04N60Z-1G, use the request quote form to request NDD04N60Z-1G pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number NDD04N60Z-1G.The price and lead time for NDD04N60Z-1G depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# NDD04N60Z-1G.We look forward to working with you to establish long-term relations of cooperation

Specifikationer

Tillstånd New & Unused, Original Packing
Ursprung Contact us
Vgs (th) (Max) @ Id:4.5V @ 50µA
Vgs (Max):±30V
Teknologi:MOSFET (Metal Oxide)
Leverantörs Device Package:I-PAK
Serier:-
Rds On (Max) @ Id, Vgs:2 Ohm @ 2A, 10V
Effektdissipation (Max):83W (Tc)
Förpackning:Tube
Förpackning / Fodral:TO-251-3 Short Leads, IPak, TO-251AA
Andra namn:NDD04N60Z-1G-ND
NDD04N60Z-1GOS
NDD04N60Z1G
Driftstemperatur:-55°C ~ 150°C (TJ)
Monteringstyp:Through Hole
Fuktkänslighetsnivå (MSL):1 (Unlimited)
Ledningsfri status / RoHS-status:Lead free / RoHS Compliant
Inputkapacitans (Ciss) (Max) @ Vds:640pF @ 25V
Gate Laddning (Qg) (Max) @ Vgs:29nC @ 10V
FET-typ:N-Channel
FET-funktionen:-
Drivspänning (Max Rds På, Min Rds På):10V
Avlopp till källspänning (Vdss):600V
detaljerad beskrivning:N-Channel 600V 4.1A (Tc) 83W (Tc) Through Hole I-PAK
Ström - Kontinuerlig avlopp (Id) @ 25 ° C:4.1A (Tc)
Email:[email protected]

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