Tillstånd | New & Unused, Original Packing |
---|---|
Ursprung | Contact us |
Vgs (th) (Max) @ Id: | 3.5V @ 60µA |
Vgs (Max): | ±16V |
Teknologi: | MOSFET (Metal Oxide) |
Leverantörs Device Package: | PG-TO251-3 |
Serier: | CoolMOS™ P7 |
Rds On (Max) @ Id, Vgs: | 900 mOhm @ 1.1A, 10V |
Effektdissipation (Max): | 30.5W (Tc) |
Förpackning / Fodral: | TO-251-3 Short Leads, IPak, TO-251AA |
Andra namn: | IPSA70R900P7S SP001664790 |
Driftstemperatur: | -40°C ~ 150°C (TJ) |
Monteringstyp: | Through Hole |
Fuktkänslighetsnivå (MSL): | 1 (Unlimited) |
Ledningsfri status / RoHS-status: | Lead free / RoHS Compliant |
Inputkapacitans (Ciss) (Max) @ Vds: | 211pF @ 400V |
Gate Laddning (Qg) (Max) @ Vgs: | 6.8nC @ 400V |
FET-typ: | N-Channel |
FET-funktionen: | - |
Drivspänning (Max Rds På, Min Rds På): | 10V |
Avlopp till källspänning (Vdss): | 700V |
detaljerad beskrivning: | N-Channel 700V 6A (Tc) 30.5W (Tc) Through Hole PG-TO251-3 |
Ström - Kontinuerlig avlopp (Id) @ 25 ° C: | 6A (Tc) |
Email: | [email protected] |