IPD12CNE8N G
IPD12CNE8N G
Artikelnummer:
IPD12CNE8N G
Tillverkare:
International Rectifier (Infineon Technologies)
Beskrivning:
MOSFET N-CH 85V 67A TO252-3
Ledningsfri status / RoHS-status:
Blyfri / Överensstämmer med RoHS
tillgänglig kvantitet:
60553 Pieces
Leveranstid:
1-2 days
Datablad:
IPD12CNE8N G.pdf

Introduktion

We can supply IPD12CNE8N G, use the request quote form to request IPD12CNE8N G pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IPD12CNE8N G.The price and lead time for IPD12CNE8N G depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# IPD12CNE8N G.We look forward to working with you to establish long-term relations of cooperation

Specifikationer

Tillstånd New & Unused, Original Packing
Ursprung Contact us
Vgs (th) (Max) @ Id:4V @ 83µA
Vgs (Max):±20V
Teknologi:MOSFET (Metal Oxide)
Leverantörs Device Package:PG-TO252-3
Serier:OptiMOS™
Rds On (Max) @ Id, Vgs:12.4 mOhm @ 67A, 10V
Effektdissipation (Max):125W (Tc)
Förpackning:Tape & Reel (TR)
Förpackning / Fodral:TO-252-3, DPak (2 Leads + Tab), SC-63
Andra namn:IPD12CNE8N G-ND
IPD12CNE8NG
SP000096477
Driftstemperatur:-55°C ~ 175°C (TJ)
Monteringstyp:Surface Mount
Fuktkänslighetsnivå (MSL):1 (Unlimited)
Ledningsfri status / RoHS-status:Lead free / RoHS Compliant
Inputkapacitans (Ciss) (Max) @ Vds:4340pF @ 40V
Gate Laddning (Qg) (Max) @ Vgs:64nC @ 10V
FET-typ:N-Channel
FET-funktionen:-
Drivspänning (Max Rds På, Min Rds På):10V
Avlopp till källspänning (Vdss):85V
detaljerad beskrivning:N-Channel 85V 67A (Tc) 125W (Tc) Surface Mount PG-TO252-3
Ström - Kontinuerlig avlopp (Id) @ 25 ° C:67A (Tc)
Email:[email protected]

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