GP1M003A080FH
GP1M003A080FH
Artikelnummer:
GP1M003A080FH
Tillverkare:
Global Power Technologies Group
Beskrivning:
MOSFET N-CH 800V 3A TO220F
Ledningsfri status / RoHS-status:
Blyfri / Överensstämmer med RoHS
tillgänglig kvantitet:
62339 Pieces
Leveranstid:
1-2 days
Datablad:
GP1M003A080FH.pdf

Introduktion

We can supply GP1M003A080FH, use the request quote form to request GP1M003A080FH pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number GP1M003A080FH.The price and lead time for GP1M003A080FH depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# GP1M003A080FH.We look forward to working with you to establish long-term relations of cooperation

Specifikationer

Tillstånd New & Unused, Original Packing
Ursprung Contact us
Vgs (th) (Max) @ Id:4V @ 250µA
Vgs (Max):±30V
Teknologi:MOSFET (Metal Oxide)
Leverantörs Device Package:TO-220F
Serier:-
Rds On (Max) @ Id, Vgs:4.2 Ohm @ 1.5A, 10V
Effektdissipation (Max):32W (Tc)
Förpackning:Tube
Förpackning / Fodral:TO-220-3 Full Pack
Andra namn:1560-1156-1
1560-1156-1-ND
1560-1156-5
Driftstemperatur:-55°C ~ 150°C (TJ)
Monteringstyp:Through Hole
Fuktkänslighetsnivå (MSL):1 (Unlimited)
Ledningsfri status / RoHS-status:Lead free / RoHS Compliant
Inputkapacitans (Ciss) (Max) @ Vds:696pF @ 25V
Gate Laddning (Qg) (Max) @ Vgs:19nC @ 10V
FET-typ:N-Channel
FET-funktionen:-
Drivspänning (Max Rds På, Min Rds På):10V
Avlopp till källspänning (Vdss):800V
detaljerad beskrivning:N-Channel 800V 3A (Tc) 32W (Tc) Through Hole TO-220F
Ström - Kontinuerlig avlopp (Id) @ 25 ° C:3A (Tc)
Email:[email protected]

Snabbsökcitation

Artikelnummer
Kvantitet
Företag
E-post
Telefon
kommentarer