FQI7N10TU
FQI7N10TU
Artikelnummer:
FQI7N10TU
Tillverkare:
AMI Semiconductor / ON Semiconductor
Beskrivning:
MOSFET N-CH 100V 7.3A I2PAK
Ledningsfri status / RoHS-status:
Blyfri / Överensstämmer med RoHS
tillgänglig kvantitet:
50756 Pieces
Leveranstid:
1-2 days
Datablad:
FQI7N10TU.pdf

Introduktion

We can supply FQI7N10TU, use the request quote form to request FQI7N10TU pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number FQI7N10TU.The price and lead time for FQI7N10TU depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# FQI7N10TU.We look forward to working with you to establish long-term relations of cooperation

Specifikationer

Tillstånd New & Unused, Original Packing
Ursprung Contact us
Vgs (th) (Max) @ Id:4V @ 250µA
Vgs (Max):±25V
Teknologi:MOSFET (Metal Oxide)
Leverantörs Device Package:I2PAK (TO-262)
Serier:QFET®
Rds On (Max) @ Id, Vgs:350 mOhm @ 3.65A, 10V
Effektdissipation (Max):3.75W (Ta), 40W (Tc)
Förpackning:Tube
Förpackning / Fodral:TO-262-3 Long Leads, I²Pak, TO-262AA
Driftstemperatur:-55°C ~ 175°C (TJ)
Monteringstyp:Through Hole
Fuktkänslighetsnivå (MSL):1 (Unlimited)
Ledningsfri status / RoHS-status:Lead free / RoHS Compliant
Inputkapacitans (Ciss) (Max) @ Vds:250pF @ 25V
Gate Laddning (Qg) (Max) @ Vgs:7.5nC @ 10V
FET-typ:N-Channel
FET-funktionen:-
Drivspänning (Max Rds På, Min Rds På):10V
Avlopp till källspänning (Vdss):100V
detaljerad beskrivning:N-Channel 100V 7.3A (Tc) 3.75W (Ta), 40W (Tc) Through Hole I2PAK (TO-262)
Ström - Kontinuerlig avlopp (Id) @ 25 ° C:7.3A (Tc)
Email:[email protected]

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