RN1131MFV(TL3,T)
RN1131MFV(TL3,T)
Part Number:
RN1131MFV(TL3,T)
Producent:
Toshiba Semiconductor and Storage
Opis:
TRANS PREBIAS NPN 0.15W VESM
Stan ołowiu / status RoHS:
Bezołowiowa / zgodna z RoHS
Dostępna Ilość:
19522 Pieces
Czas dostawy:
1-2 days
Arkusz danych:
RN1131MFV(TL3,T).pdf

Wprowadzenie

We can supply RN1131MFV(TL3,T), use the request quote form to request RN1131MFV(TL3,T) pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number RN1131MFV(TL3,T).The price and lead time for RN1131MFV(TL3,T) depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# RN1131MFV(TL3,T).We look forward to working with you to establish long-term relations of cooperation

Specyfikacje

Stan New & Unused, Original Packing
Pochodzenie Contact us
Napięcie - kolektor emiter (Max):50V
Vce Nasycenie (Max) @ IB, IC:300mV @ 500µA, 5mA
Typ tranzystora:NPN - Pre-Biased
Dostawca urządzeń Pakiet:VESM
Seria:-
Rezystor - Podstawa (R1):100 kOhms
Moc - Max:150mW
Opakowania:Cut Tape (CT)
Package / Case:SOT-723
Inne nazwy:RN1131MFV(TL3T)CT
Rodzaj mocowania:Surface Mount
Poziom czułości na wilgoć (MSL):1 (Unlimited)
Status bezołowiowy / status RoHS:Lead free / RoHS Compliant
szczegółowy opis:Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 150mW Surface Mount VESM
DC Prąd Zysk (hFE) (min) @ Ic, Vce:120 @ 1mA, 5V
Obecny - Collector odcięcia (Max):100nA (ICBO)
Obecny - Collector (Ic) (maks):100mA
Email:[email protected]

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