Kondisyon | New & Unused, Original Packing |
---|---|
Pinanggalingan | Contact us |
Boltahe - Test: | 21pF @ 32.5V |
Boltahe - Breakdown: | Die |
Vgs (th) (Max) @ Id: | 530 mOhm @ 500mA, 5V |
teknolohiya: | GaNFET (Gallium Nitride) |
serye: | eGaN® |
RoHS Status: | Tray |
Rds On (Max) @ Id, Vgs: | 2A (Ta) |
polariseysyon: | Die |
Ibang pangalan: | 917-EPC8002ENGR EPC8002ENGI |
operating Temperature: | -40°C ~ 150°C (TJ) |
Salalayan Type: | Surface Mount |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Manufacturer Bilang Bahagi: | EPC8002ENGR |
Input Kapasidad (Ciss) (Max) @ Vds: | 0.14nC @ 5V |
Gate Charge (Qg) (Max) @ Vgs: | 2.5V @ 250µA |
FET Tampok: | N-Channel |
Ang pinalawak Paglalarawan: | N-Channel 65V 2A (Ta) Surface Mount Die |
Alisan ng tubig sa Source Boltahe (Vdss): | - |
paglalarawan: | TRANS GAN 65V 2A BUMPED DIE |
Current - Ang patuloy Drain (Id) @ 25 ° C: | 65V |
kapasidad Ratio: | - |
Email: | [email protected] |