SIHB20N50E-GE3
SIHB20N50E-GE3
Delenummer:
SIHB20N50E-GE3
Produsent:
Electro-Films (EFI) / Vishay
Beskrivelse:
MOSFET N-CH 500V 19A TO-263
Lead Free Status / RoHS Status:
Blyfri / RoHS-kompatibel
Tilgjengelig mengde:
33831 Pieces
Leveringstid:
1-2 days
Dataark:
SIHB20N50E-GE3.pdf

Introduksjon

We can supply SIHB20N50E-GE3, use the request quote form to request SIHB20N50E-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SIHB20N50E-GE3.The price and lead time for SIHB20N50E-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SIHB20N50E-GE3.We look forward to working with you to establish long-term relations of cooperation

spesifikasjoner

Tilstand New & Unused, Original Packing
Opprinnelse Contact us
Vgs (th) (Maks) @ Id:4V @ 250µA
Vgs (maks):±30V
Teknologi:MOSFET (Metal Oxide)
Leverandør Enhetspakke:D²PAK (TO-263)
Serie:-
Rds På (Maks) @ Id, Vgs:184 mOhm @ 10A, 10V
Strømdissipasjon (maks):179W (Tc)
emballasje:Bulk
Pakke / tilfelle:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Driftstemperatur:-55°C ~ 150°C (TJ)
Monteringstype:Surface Mount
Vannfølsomhetsnivå (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Inputkapasitans (Ciss) (Maks) @ Vds:1640pF @ 100V
Gateavgift (Qg) (Maks) @ Vgs:92nC @ 10V
FET Type:N-Channel
FET-funksjonen:-
Drivspenning (Maks. Rds På, Min Rds På):10V
Drain til Source Voltage (VDSS):500V
Detaljert beskrivelse:N-Channel 500V 19A (Tc) 179W (Tc) Surface Mount D²PAK (TO-263)
Strøm - Kontinuerlig avløp (Id) @ 25 ° C:19A (Tc)
Email:[email protected]

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