SIHB12N65E-GE3
SIHB12N65E-GE3
Delenummer:
SIHB12N65E-GE3
Produsent:
Vishay / Siliconix
Beskrivelse:
MOSFET N-CH 650V 12A D2PAK
Lead Free Status / RoHS Status:
Blyfri / RoHS-kompatibel
Tilgjengelig mengde:
33605 Pieces
Leveringstid:
1-2 days
Dataark:
SIHB12N65E-GE3.pdf

Introduksjon

We can supply SIHB12N65E-GE3, use the request quote form to request SIHB12N65E-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SIHB12N65E-GE3.The price and lead time for SIHB12N65E-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SIHB12N65E-GE3.We look forward to working with you to establish long-term relations of cooperation

spesifikasjoner

Tilstand New & Unused, Original Packing
Opprinnelse Contact us
Spenning - Test:1224pF @ 100V
Spenning - Fordeling:D²PAK (TO-263)
Vgs (th) (Maks) @ Id:380 mOhm @ 6A, 10V
Teknologi:MOSFET (Metal Oxide)
Serie:-
RoHS Status:Tape & Reel (TR)
Rds På (Maks) @ Id, Vgs:12A (Tc)
polarisering:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Driftstemperatur:-55°C ~ 150°C (TJ)
Monteringstype:Surface Mount
Vannfølsomhetsnivå (MSL):1 (Unlimited)
Produsentens Standard Lead Time:19 Weeks
Produsentens varenummer:SIHB12N65E-GE3
Inputkapasitans (Ciss) (Maks) @ Vds:70nC @ 10V
Gateavgift (Qg) (Maks) @ Vgs:4V @ 250µA
FET-funksjonen:N-Channel
Utvidet beskrivelse:N-Channel 650V 12A (Tc) 156W (Tc) Surface Mount D²PAK (TO-263)
Drain til Source Voltage (VDSS):-
Beskrivelse:MOSFET N-CH 650V 12A D2PAK
Strøm - Kontinuerlig avløp (Id) @ 25 ° C:650V
Kapasitansforhold:156W (Tc)
Email:[email protected]

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