SIHD6N62E-GE3
SIHD6N62E-GE3
Onderdeel nummer:
SIHD6N62E-GE3
Fabrikant:
Electro-Films (EFI) / Vishay
Beschrijving:
MOSFET N-CH 620V 6A TO-252
Leid Free Status / RoHS Status:
Loodvrij / RoHS-conform
beschikbare kwaliteit:
50879 Pieces
Aflevertijd:
1-2 days
Data papier:
SIHD6N62E-GE3.pdf

Invoering

We can supply SIHD6N62E-GE3, use the request quote form to request SIHD6N62E-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SIHD6N62E-GE3.The price and lead time for SIHD6N62E-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SIHD6N62E-GE3.We look forward to working with you to establish long-term relations of cooperation

bestek

Staat New & Unused, Original Packing
Oorsprong Contact us
VGS (th) (Max) @ Id:4V @ 250µA
Vgs (Max):±30V
Technologie:MOSFET (Metal Oxide)
Leverancier Device Pakket:D-PAK (TO-252AA)
Serie:-
Rds On (Max) @ Id, VGS:900 mOhm @ 3A, 10V
Vermogensverlies (Max):78W (Tc)
Packaging:Cut Tape (CT)
Verpakking / doos:TO-252-3, DPak (2 Leads + Tab), SC-63
Andere namen:SIHD6N62E-GE3CT
SIHD6N62E-GE3CT-ND
Temperatuur:-55°C ~ 150°C (TJ)
montage Type:Surface Mount
Vochtgevoeligheidsniveau (MSL):1 (Unlimited)
Loodvrije status / RoHS-status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:578pF @ 100V
Gate Charge (Qg) (Max) @ Vgs:34nC @ 10V
FET Type:N-Channel
FET Feature:-
Aandrijfspanning (Max. Rds Aan, Min. Rds Aan):10V
gedetailleerde beschrijving:N-Channel 6A (Tc) 78W (Tc) Surface Mount D-PAK (TO-252AA)
Current - Continuous Drain (Id) @ 25 ° C:6A (Tc)
Email:[email protected]

Quick Request Quote

Onderdeel nummer
Aantal stuks
Bedrijf
E-mail
Telefoon
Comments