SI3900DV-T1-E3
SI3900DV-T1-E3
Onderdeel nummer:
SI3900DV-T1-E3
Fabrikant:
Vishay / Siliconix
Beschrijving:
MOSFET 2N-CH 20V 2A 6-TSOP
Leid Free Status / RoHS Status:
Loodvrij / RoHS-conform
beschikbare kwaliteit:
70667 Pieces
Aflevertijd:
1-2 days
Data papier:
SI3900DV-T1-E3.pdf

Invoering

We can supply SI3900DV-T1-E3, use the request quote form to request SI3900DV-T1-E3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SI3900DV-T1-E3.The price and lead time for SI3900DV-T1-E3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SI3900DV-T1-E3.We look forward to working with you to establish long-term relations of cooperation

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Staat New & Unused, Original Packing
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Voltage - Test:-
Voltage - Breakdown:6-TSOP
VGS (th) (Max) @ Id:125 mOhm @ 2.4A, 4.5V
Serie:TrenchFET®
RoHS Status:Tape & Reel (TR)
Rds On (Max) @ Id, VGS:2A
Vermogen - Max:830mW
Polarisatie:SOT-23-6 Thin, TSOT-23-6
Andere namen:SI3900DV-T1-E3TR
SI3900DVT1E3
Temperatuur:-55°C ~ 150°C (TJ)
montage Type:Surface Mount
Vochtgevoeligheidsniveau (MSL):1 (Unlimited)
Fabrikant Standaard Levertijd:15 Weeks
Fabrikant Onderdeelnummer:SI3900DV-T1-E3
Input Capacitance (Ciss) (Max) @ Vds:4nC @ 4.5V
Gate Charge (Qg) (Max) @ Vgs:1.5V @ 250µA
FET Feature:2 N-Channel (Dual)
Uitgebreide beschrijving:Mosfet Array 2 N-Channel (Dual) 20V 2A 830mW Surface Mount 6-TSOP
Drain naar de Bron Voltage (Vdss):Logic Level Gate
Beschrijving:MOSFET 2N-CH 20V 2A 6-TSOP
Current - Continuous Drain (Id) @ 25 ° C:20V
Email:[email protected]

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