ZXMN3AM832TA
ZXMN3AM832TA
Modello di prodotti:
ZXMN3AM832TA
fabbricante:
Diodes Incorporated
Descrizione:
MOSFET 2N-CH 30V 2.9A 8MLP
Stato Lead senza piombo / RoHS:
Senza piombo / RoHS conforme
quantità disponibile:
39825 Pieces
Tempo di consegna:
1-2 days
Scheda dati:
ZXMN3AM832TA.pdf

introduzione

We can supply ZXMN3AM832TA, use the request quote form to request ZXMN3AM832TA pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number ZXMN3AM832TA.The price and lead time for ZXMN3AM832TA depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# ZXMN3AM832TA.We look forward to working with you to establish long-term relations of cooperation

Specifiche

Condizione New & Unused, Original Packing
Origine Contact us
Vgs (th) (max) a Id:1V @ 250µA (Min)
Contenitore dispositivo fornitore:8-MLP (3x2)
Serie:-
Rds On (max) a Id, Vgs:120 mOhm @ 2.5A, 10V
Potenza - Max:1.13W
imballaggio:Cut Tape (CT)
Contenitore / involucro:8-VDFN Exposed Pad
Altri nomi:ZXMN3AM832CT
ZXMN3AM832TA-ND
temperatura di esercizio:-55°C ~ 150°C (TJ)
Tipo montaggio:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Stato senza piombo / Stato RoHS:Lead free / RoHS Compliant
Capacità di ingresso (Ciss) (Max) @ Vds:190pF @ 25V
Carica Gate (Qg) (Max) @ Vgs:3.9nC @ 10V
Tipo FET:2 N-Channel (Dual)
Caratteristica FET:Logic Level Gate
Tensione drain-source (Vdss):30V
Descrizione dettagliata:Mosfet Array 2 N-Channel (Dual) 30V 2.9A 1.13W Surface Mount 8-MLP (3x2)
Corrente - Drain continuo (Id) @ 25 ° C:2.9A
Email:[email protected]

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