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Casa > Centro di prodotti > Prodotti a semiconduttore discreti > Transistor-FET, MOSFET-singolo > VP3203N3-G
VP3203N3-G
Modello di prodotti:
VP3203N3-G
fabbricante:
Micrel / Microchip Technology
Descrizione:
MOSFET P-CH 30V 650MA TO92-3
Stato Lead senza piombo / RoHS:
Senza piombo / RoHS conforme
quantità disponibile:
70879 Pieces
Tempo di consegna:
1-2 days
Scheda dati:
VP3203N3-G.pdf
Inchiesta

introduzione

We can supply VP3203N3-G, use the request quote form to request VP3203N3-G pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number VP3203N3-G.The price and lead time for VP3203N3-G depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# VP3203N3-G.We look forward to working with you to establish long-term relations of cooperation

Specifiche

Condizione New & Unused, Original Packing
Origine Contact us
Vgs (th) (max) a Id:3.5V @ 10mA
Vgs (Max):±20V
Tecnologia:MOSFET (Metal Oxide)
Contenitore dispositivo fornitore:TO-92-3
Serie:-
Rds On (max) a Id, Vgs:600 mOhm @ 3A, 10V
Dissipazione di potenza (max):740mW (Ta)
imballaggio:Bulk
Contenitore / involucro:TO-226-3, TO-92-3 (TO-226AA)
temperatura di esercizio:-55°C ~ 150°C (TJ)
Tipo montaggio:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Produttore tempi di consegna standard:14 Weeks
Stato senza piombo / Stato RoHS:Lead free / RoHS Compliant
Capacità di ingresso (Ciss) (Max) @ Vds:300pF @ 25V
Tipo FET:P-Channel
Caratteristica FET:-
Tensione dell'azionamento (Max Rds On, Min Rds On):4.5V, 10V
Tensione drain-source (Vdss):30V
Descrizione dettagliata:P-Channel 30V 650mA (Tj) 740mW (Ta) Through Hole TO-92-3
Corrente - Drain continuo (Id) @ 25 ° C:650mA (Tj)
Email:[email protected]

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