TPC8213-H(TE12LQ,M
Modello di prodotti:
TPC8213-H(TE12LQ,M
fabbricante:
Toshiba Semiconductor and Storage
Descrizione:
MOSFET 2N-CH 60V 5A SOP8
Stato Lead senza piombo / RoHS:
Senza piombo / RoHS conforme
quantità disponibile:
52696 Pieces
Tempo di consegna:
1-2 days
Scheda dati:
1.TPC8213-H(TE12LQ,M.pdf2.TPC8213-H(TE12LQ,M.pdf

introduzione

We can supply TPC8213-H(TE12LQ,M, use the request quote form to request TPC8213-H(TE12LQ,M pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number TPC8213-H(TE12LQ,M.The price and lead time for TPC8213-H(TE12LQ,M depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# TPC8213-H(TE12LQ,M.We look forward to working with you to establish long-term relations of cooperation

Specifiche

Condizione New & Unused, Original Packing
Origine Contact us
Vgs (th) (max) a Id:2.3V @ 1mA
Contenitore dispositivo fornitore:8-SOP (5.5x6.0)
Serie:-
Rds On (max) a Id, Vgs:50 mOhm @ 2.5A, 10V
Potenza - Max:450mW
imballaggio:Tape & Reel (TR)
Contenitore / involucro:8-SOIC (0.173", 4.40mm Width)
temperatura di esercizio:150°C (TJ)
Tipo montaggio:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Stato senza piombo / Stato RoHS:Lead free / RoHS Compliant
Capacità di ingresso (Ciss) (Max) @ Vds:625pF @ 10V
Carica Gate (Qg) (Max) @ Vgs:11nC @ 10V
Tipo FET:2 N-Channel (Dual)
Caratteristica FET:Logic Level Gate
Tensione drain-source (Vdss):60V
Descrizione dettagliata:Mosfet Array 2 N-Channel (Dual) 60V 5A 450mW Surface Mount 8-SOP (5.5x6.0)
Corrente - Drain continuo (Id) @ 25 ° C:5A
Email:[email protected]

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