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Casa > Centro di prodotti > Prodotti a semiconduttore discreti > Transistor-FET, MOSFET-singolo > TK40P03M1(T6RSS-Q)
TK40P03M1(T6RSS-Q)
Modello di prodotti:
TK40P03M1(T6RSS-Q)
fabbricante:
Toshiba Semiconductor and Storage
Descrizione:
MOSFET N-CH 30V 40A 3DP 2-7K1A
Stato Lead senza piombo / RoHS:
Senza piombo / RoHS conforme
quantità disponibile:
66922 Pieces
Tempo di consegna:
1-2 days
Scheda dati:
1.TK40P03M1(T6RSS-Q).pdf2.TK40P03M1(T6RSS-Q).pdf
Inchiesta

introduzione

We can supply TK40P03M1(T6RSS-Q), use the request quote form to request TK40P03M1(T6RSS-Q) pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number TK40P03M1(T6RSS-Q).The price and lead time for TK40P03M1(T6RSS-Q) depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# TK40P03M1(T6RSS-Q).We look forward to working with you to establish long-term relations of cooperation

Specifiche

Condizione New & Unused, Original Packing
Origine Contact us
Vgs (th) (max) a Id:2.3V @ 100µA
Vgs (Max):±20V
Tecnologia:MOSFET (Metal Oxide)
Contenitore dispositivo fornitore:DP
Serie:U-MOSVI-H
Rds On (max) a Id, Vgs:10.8 mOhm @ 20A, 10V
Dissipazione di potenza (max):-
imballaggio:Tape & Reel (TR)
Contenitore / involucro:TO-252-3, DPak (2 Leads + Tab), SC-63
temperatura di esercizio:-
Tipo montaggio:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Stato senza piombo / Stato RoHS:Lead free / RoHS Compliant
Capacità di ingresso (Ciss) (Max) @ Vds:1150pF @ 10V
Carica Gate (Qg) (Max) @ Vgs:17.5nC @ 10V
Tipo FET:N-Channel
Caratteristica FET:-
Tensione dell'azionamento (Max Rds On, Min Rds On):4.5V, 10V
Tensione drain-source (Vdss):30V
Descrizione dettagliata:N-Channel 30V 40A (Ta) Surface Mount DP
Corrente - Drain continuo (Id) @ 25 ° C:40A (Ta)
Email:[email protected]

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