SQS944ENW-T1_GE3
Modello di prodotti:
SQS944ENW-T1_GE3
fabbricante:
Electro-Films (EFI) / Vishay
Descrizione:
MOSFET N-CHAN 40V
Stato Lead senza piombo / RoHS:
Senza piombo / RoHS conforme
quantità disponibile:
34530 Pieces
Tempo di consegna:
1-2 days
Scheda dati:
SQS944ENW-T1_GE3.pdf

introduzione

We can supply SQS944ENW-T1_GE3, use the request quote form to request SQS944ENW-T1_GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SQS944ENW-T1_GE3.The price and lead time for SQS944ENW-T1_GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SQS944ENW-T1_GE3.We look forward to working with you to establish long-term relations of cooperation

Specifiche

Condizione New & Unused, Original Packing
Origine Contact us
Vgs (th) (max) a Id:2.5V @ 250µA
Contenitore dispositivo fornitore:PowerPAK® 1212-8W
Serie:Automotive, AEC-Q101, TrenchFET®
Rds On (max) a Id, Vgs:25 mOhm @ 1.25A, 10V
Potenza - Max:27.8W (Tc)
imballaggio:Original-Reel®
Contenitore / involucro:PowerPAK® 1212-8W
Altri nomi:SQS944ENW-T1_GE3DKR
temperatura di esercizio:-55°C ~ 175°C (TJ)
Tipo montaggio:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Stato senza piombo / Stato RoHS:Lead free / RoHS Compliant
Capacità di ingresso (Ciss) (Max) @ Vds:615pF @ 25V
Carica Gate (Qg) (Max) @ Vgs:10nC @ 10V
Tipo FET:2 N-Channel (Dual)
Caratteristica FET:Standard
Tensione drain-source (Vdss):40V
Descrizione dettagliata:Mosfet Array 2 N-Channel (Dual) 40V 6A (Tc) 27.8W (Tc) Surface Mount PowerPAK® 1212-8W
Corrente - Drain continuo (Id) @ 25 ° C:6A (Tc)
Email:[email protected]

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