SQM120N10-09_GE3
SQM120N10-09_GE3
Modello di prodotti:
SQM120N10-09_GE3
fabbricante:
Electro-Films (EFI) / Vishay
Descrizione:
MOSFET N-CH 100V 120A TO263
quantità disponibile:
36847 Pieces
Tempo di consegna:
1-2 days
Scheda dati:
SQM120N10-09_GE3.pdf

introduzione

We can supply SQM120N10-09_GE3, use the request quote form to request SQM120N10-09_GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SQM120N10-09_GE3.The price and lead time for SQM120N10-09_GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SQM120N10-09_GE3.We look forward to working with you to establish long-term relations of cooperation

Specifiche

Condizione New & Unused, Original Packing
Origine Contact us
Vgs (th) (max) a Id:3.5V @ 250µA
Vgs (Max):±20V
Tecnologia:MOSFET (Metal Oxide)
Contenitore dispositivo fornitore:TO-263 (D²Pak)
Serie:Automotive, AEC-Q101, TrenchFET®
Rds On (max) a Id, Vgs:9.5 mOhm @ 30A, 10V
Dissipazione di potenza (max):375W (Tc)
imballaggio:Tape & Reel (TR)
Contenitore / involucro:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
temperatura di esercizio:-55°C ~ 175°C (TJ)
Tipo montaggio:Surface Mount
Capacità di ingresso (Ciss) (Max) @ Vds:8645pF @ 25V
Carica Gate (Qg) (Max) @ Vgs:180nC @ 10V
Tipo FET:N-Channel
Caratteristica FET:-
Tensione dell'azionamento (Max Rds On, Min Rds On):10V
Tensione drain-source (Vdss):100V
Descrizione dettagliata:N-Channel 100V 120A (Tc) 375W (Tc) Surface Mount TO-263 (D²Pak)
Corrente - Drain continuo (Id) @ 25 ° C:120A (Tc)
Email:[email protected]

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